to-92 plastic-encapsulate transistors feature ? excellent hfe linearity ? low noise ? complementary to a733 maximum maximum maximum maximum ratings ratings ratings ratings (ta=25 unless otherwise noted) symbol symbol symbol symbol parameter parameter parameter parameter value value value value units units units units vcbo vcbo vcbo vcbo collector-base voltage 60 v vceo vceo vceo vceo collector-emitter voltage 50 v vebo vebo vebo vebo emitter-base voltage 5 v ic ic ic ic collector current -continuous 150 ma pc pc pc pc collector power dissipation 400 mw tj tj tj tj junction temperature 125 tstg tstg tstg tstg storage temperature -55-125 electrical characteristics (tamb=25 unless otherwise specified) parameter parameter parameter parameter symbol symbol symbol symbol test test test test conditions conditions conditions conditions min min min min typ typ typ typ max max max max unit unit unit unit collector-base collector-base collector-base collector-base breakdown breakdown breakdown breakdown voltage voltage voltage voltage v (br)cbo i c =1ma , i e =0 60 v collector-emitter collector-emitter collector-emitter collector-emitter breakdown breakdown breakdown breakdown voltage voltage voltage voltage v (br)ceo i c =100ua , i b =0 50 v emitter-base emitter-base emitter-base emitter-base breakdown breakdown breakdown breakdown voltage voltage voltage voltage v (br)ebo i e =100ma, i c =0 5 v collector collector collector collector cut-off cut-off cut-off cut-off current current current current i cbo v cb =60v, i e =0 0.1 ua collector collector collector collector cut-off cut-off cut-off cut-off current current current current i ceo v ce =45v 0.1 ua emitter emitter emitter emitter cut-off cut-off cut-off cut-off current current current current i ebo v eb =5v , i c =0 0.1 ua dc dc dc dc current current current current gain gain gain gain h fe(1) v ce =6 v , i c =1ma 70 700 h fe(2) v ce =6 v , i c =0.1ma 40 collector-emitter collector-emitter collector-emitter collector-emitter saturation saturation saturation saturation voltage voltage voltage voltage v ce(sat) i c =100ma, i b =10ma 0.3 v base-emitter base-emitter base-emitter base-emitter saturation saturation saturation saturation voltage voltage voltage voltage v be(sat) i c =100ma, i b =10ma 1 v transition transition transition transition frequency frequency frequency frequency f t v ce =6v,i c =10ma,f =30 mhz 200 mhz collector collector collector collector output output output output capacitance capacitance capacitance capacitance cob v cb =10v,i e =0,f=1mh z 3.0 pf noise noise noise noise figure figure figure figure nf v ce = 6v,i c =0.1 ma r g =10 k ? ,f=1k mh z 10 db classification classification classification classification of of of of hfe(1) hfe(1) hfe(1) hfe(1) rank rank rank rank o y gr bl range range range range 70-140 120-240 200-400 350-700 to-92 1.emitter 2.base 3.collector 1 2 3 product specification 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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